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Which of the following statements is false?
A
The resistance of intrinsic semiconductor decreases with increase of temperature
B
Pure Si doped with trivalent impurities gives a p-type semiconductor
C
Majority carriers in a n-type semiconductor are holes
D
Minority carriers in a p-type semiconductor are electrons
Detailed Solution
With rise in temperature more covalent bonds break in an intrinsic semiconductor, more electron–hole pairs are produced and its resistance decreases (true).
A trivalent impurity (B, Al, In) has one electron less than Si and creates a hole, giving a p-type semiconductor (true).
In a p-type semiconductor holes are the majority carriers and electrons are the minority carriers (true).
An n-type semiconductor is made with a pentavalent impurity that donates electrons, so its majority carriers are electrons, and holes are the minority carriers.
Hence the false statement is that majority carriers in an n-type semiconductor are holes.
A trivalent impurity (B, Al, In) has one electron less than Si and creates a hole, giving a p-type semiconductor (true).
In a p-type semiconductor holes are the majority carriers and electrons are the minority carriers (true).
An n-type semiconductor is made with a pentavalent impurity that donates electrons, so its majority carriers are electrons, and holes are the minority carriers.
Hence the false statement is that majority carriers in an n-type semiconductor are holes.