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The increase in the width of the depletion region in a p-n junction diode is due to:
A
reverse bias only
B
both forward bias and reverse bias
C
increase in forward current
D
forward bias only
Detailed Solution
In reverse bias, the applied voltage adds to the barrier potential, pushing majority carriers away from the junction.
So the width of the depletion region increases due to reverse biasing only (it decreases in forward bias).